A Design of Wide-Range and Low Phase Noise Linear Transconductance VCO with 193.76 dBc/Hz FoMT for mm-Wave 5G Transceivers

This paper presents a wide-range and low phase noise mm-Wave Voltage Controlled Oscillator (VCO) based on the transconductance linearization technique. The proposed technique eliminates the deep triode region of the active part of the VCO, and lowers the noise introduced by the gm-cell. The switch sizes inside the switched capacitor bank of the VCO are optimized to minimize the resistance of the switches while keeping the wide tuning range. A new layout technique shortens the routing of the VCO outputs, and lowers the parasitic inductance and resistance of the VCO routing. The presented method prevents the reduction of the quality factor of the tank due to the long routing. The proposed VCO achieves a discrete frequency tuning range, of 14 GHz to 18 GHz, through a linear coarse and middle switched capacitor array, and offers superior phase noise performance compared to recent state-of-the-art VCO architectures. The design is implemented in a 45 nm CMOS process and occupies a layout area (including output buffers) of 0.14 mm2. The power consumption of the VCO core is 24 mW from the power supply of 0.8 V. The post-layout simulation result shows the VCO achieves the phase noise performances of −87.2 dBc/Hz and −113 dBc/Hz, at 100 kHz and 1 MHz offset frequencies from the carrier frequency of 14 GHz, respectively. In an 18 GHz carrier frequency, the results are −87.4 dBc/Hz and −110 dBc/Hz, accordingly

A Dual-Band 47-dB Dynamic Range 0.5-dB/Step DPA with Dual-Path Power-Combining Structure for NB-IoT

This paper presents a digital power amplifier (DPA) with a 43-dB dynamic range and 0.5-dB/step gain steps for a narrow-band Internet of Things (NBIoT) transceiver application. The proposed DPA is implemented in a dual-band architecture for both the low band and high band of the frequency coverage in an NBIoT application. The proposed DPA is implemented in two individual paths, power amplification, and power attenuation, to provide a wide range when both paths are implemented. To perform the fine control over the gain steps, ten fully differential cascode power amplifier cores, in parallel with a binary sizing, are used to amplify power and enable signals and provide fine gain steps. For the attenuation path, ten steps of attenuated signal level are provided which are controlled with ten power cores, similar to the power amplification path in parallel but with a fixed, small size for the cores. The proposed implementation is finalized with output custom-made baluns at the output. The technique of using parallel controlled cores provides a fine power adjustability by using a small area on the die where the NBIoT is fabricated in a 65-nm CMOS technology. Experimental results show a dynamic range of 47 dB with 0.5-dB fine steps are also available

Low Phase-Noise, 2.4 and 5.8 GHz Dual-Band Frequency Synthesizer with Class-C VCO and Bias-Controlled Charge Pump for RF Wireless Charging System in 180 nm CMOS Process

This paper presents an integer-N phase-locked loop (PLL) for an RF wireless charging system. To improve the phase-noise characteristics under low power, a constant amplitude control class-C voltage-controlled oscillator (VCO) with a DC-DC converter, and a bias-controlled charge pump with a feedback loop are proposed. The frequency range of the VCO is 4.5–6.1 GHz, the target frequency of the proposed PLL is 2.4 and 5.8 GHz in the industry–science–medical band. It is designed with a same phase margin and bandwidth using one loop filter. The proposed PLL consumes less than 8 mW from a 1.8 V power supply with a settling time of fewer than 20 μs and an area of 1200 μm × 800 μm in the 180 nm CMOS process. For a carrier frequency offset of 1 MHz, the measured phase noise is −118.5 dBc/Hz at 2.4 GHz and −116.6 dBc/Hz at 5.8 GHz. Its FoM including the phase noise is −197 dB at 2.4 GHz and −202.8 GHz at 5.8 GHz, outperforming other PLLs designed in the 180 nm CMOS process

A High Noise Immunity, 28 × 16-Channel Finger Touch Sensing IC Using OFDM and Frequency Translation Technique

In this paper, a high noise immunity, 28 × 16-channel finger touch sensing IC for an orthogonal frequency division multiplexing (OFDM) touch sensing scheme is presented. In order to increase the signal-to-noise ratio (SNR), the OFDM sensing scheme is proposed. The transmitter (TX) transmits the orthogonal signal to each channels of the panel. The receiver (RX) detects the magnitude of the orthogonal frequency to be transmitted from the TX. Due to the orthogonal characteristics, it is robust to narrowband interference and noise. Therefore, the SNR can be improved. In order to reduce the noise effect of low frequencies, a mixer and high-pass filter are proposed as well. After the noise is filtered, the touch SNR attained is 60 dB, from 20 dB before the noise is filtered. The advantage of the proposed OFDM sensing scheme is its ability to detect channels of the panel simultaneously with the use of multiple carriers. To satisfy the linearity of the signal in the OFDM system, a high-linearity mixer and a rail-to-rail amplifier in the TX driver are designed. The proposed design is implemented in 90 nm CMOS process. The SNR is approximately 60 dB. The area is 13.6 mm2, and the power consumption is 62.4 mW

A 1.8–2.7 GHz Triple-Band Low Noise Amplifier with 31.5 dB Dynamic Range of Power Gain and Adaptive Power Consumption for LTE Application

This paper presents a multi-gain radio frequency (RF) front-end low noise amplifier (LNA) utilizing a multi-core based on the source degeneration topology. The LNA can cover a wide range of input and output frequency matching by using a receiver (RX) switch at the input and a capacitor bank at the output of the LNA. In the proposed architecture here, to avoid the saturation of RX chain, 12 gain steps including positive, 0 dB, and negative power gains are controlled by a mobile industry processor interface (MIPI). The multi-core architecture offers the ability to control the power consumption over different gain steps. In order to avoid the phase discontinuity, the negative gain steps are provided using an active amplification and T-type attenuation path that keeps the phase discontinuity below ±5 degrees between two adjacent power gain steps. Using the multi-core structure, the power consumption is optimized in different power gains. The structure is enhanced with the adaptive variable cores and reactance parameters to maintain different power consumption for different gain steps and remain the output matching in an acceptable operating range. Furthermore, auxiliary linearization circuitries are added to improve the input third intercept point (IIP3) performance of the LNA. The chip is fabricated in 65 nm complementary metal-oxide semiconductor (CMOS) silicon on insulator (SOI) process and the die area is 0.308 mm2. The proposed architecture achieves the IIP3 performance of −10.2 dBm and 8.6 dBm in the highest and lowest power gains, which are 20.5 dB and −11 dB, respectively. It offers the noise figure (NF) performance of 1.15 dB in the highest power gain while it reaches 14 dB when the power gain is −11 dB. The LNA consumes 16.8 mA and 1.33 mA current from a 1 V power supply that is provided by an on-chip low-dropout (LDO) when it operates at the highest and lowest gains, respectively

Low Phase-Noise, 2.4 and 5.8 GHz Dual-Band Frequency Synthesizer with Class-C VCO and Bias-Controlled Charge Pump for RF Wireless Charging System in 180 nm CMOS Process

This paper presents an integer-N phase-locked loop (PLL) for an RF wireless charging system. To improve the phase-noise characteristics under low power, a constant amplitude control class-C voltage-controlled oscillator (VCO) with a DC-DC converter, and a bias-controlled charge pump with a feedback loop are proposed. The frequency range of the VCO is 4.5–6.1 GHz, the target frequency of the proposed PLL is 2.4 and 5.8 GHz in the industry–science–medical band. It is designed with a same phase margin and bandwidth using one loop filter. The proposed PLL consumes less than 8 mW from a 1.8 V power supply with a settling time of fewer than 20 μs and an area of 1200 μm × 800 μm in the 180 nm CMOS process. For a carrier frequency offset of 1 MHz, the measured phase noise is −118.5 dBc/Hz at 2.4 GHz and −116.6 dBc/Hz at 5.8 GHz. Its FoM including the phase noise is −197 dB at 2.4 GHz and −202.8 GHz at 5.8 GHz, outperforming other PLLs designed in the 180 nm CMOS process

Design of a Low Power 10-b 8-MS/s Asynchronous SAR ADC with On-Chip Reference Voltage Generator

This paper presents an energy-efficient low power 10-b 8-MS/s asynchronous successive approximation register (SAR) analog-to-digital (ADC) converter. An inverted common-mode charge recovery technique is proposed to reduce the switching energy and to improve the linearity of the digital-to-analog converter (DAC). The proposed switching technique consumes only 149 CVREF2 switching energy for the 10-bit case. A rail-to-rail dynamic latch comparator is implemented with adaptive power control for better power efficiency. Additionally, to optimize the power consumption and performance of the logic part, a modified asynchronous type SAR control logic with digitally controllable delay cells is adopted. An on-chip reference voltage generator is also designed with an ADC core for practical use. The structure is realized using 55-nm complementary metal–oxide–semiconductor (CMOS) process technology. The proposed architecture achieves an effective number of bits (ENOB) of 9.56 bits and a signal-to-noise and distortion ratio (SNDR) level of 59.3 dB with a sampling rate of 8 MS/s at measurement level. The whole architecture consumes only 572 µW power when a power supply of 1 V is applied

A Highly Reliable, 5.8 GHz DSRC Wake-Up Receiver with an Intelligent Digital Controller for an ETC System

In this article, a highly reliable radio frequency (RF) wake-up receiver (WuRx) is presented for electronic toll collection (ETC) applications. An intelligent digital controller (IDC) is proposed as the final stage for improving WuRx reliability and replacing complex analog blocks. With IDC, high reliability and accuracy are achieved by sensing and ensuring the successive, configurable number of wake-up signal cycles before enabling power-hungry RF transceiver. The IDC and range communication (RC) oscillator current consumption is reduced by a presented self-hibernation technique during the non-wake-up period. For accommodating wake-up signal frequency variation and enhancing WuRx accuracy, a digital hysteresis is incorporated. To avoid uncertain conditions during poor and false wake-up, a watch-dog timer for IDC self-recovery is integrated. During wake-up, the digital controller consumes 34.62 nW power and draws 38.47 nA current from a 0.9 V supply. In self-hibernation mode, its current reduces to 9.7 nA. It is fully synthesizable and needs 809 gates for its implementation in a 130 nm CMOS process with a 94 × 82 µm2 area. The WuRx measured power consumption is 2.48 µW, has −46 dBm sensitivity, and a 0.484 mm² chip area

A Design of Analog Front-End with DBPSK Demodulator for Magnetic Field Wireless Network Sensors

This paper presents an on-chip fully integrated analog front-end (AFE) with a non-coherent digital binary phase-shift keying (DBPSK) demodulator suitable for short-range magnetic field wireless communication applications. The proposed non-coherent DBPSK demodulator is designed based on using comparators to digitize the received differential analog BPSK signal. The DBPSK demodulator does not need any phase-lock loop (PLL) to detect the data and recover the clock. Moreover, the proposed demodulator provides the detected data and the recovered clock simultaneously. Even though previous studies have offered the basic structure of the AFEs, this work tries to amplify and generate the required differential BPSK signal without missing data and clock throughout the AFE, while a low voltage level signal is received at the input of the AFE. A DC-offset cancellation (DCOC), a cascaded variable gain amplifier (VGA), and a single-to-differential (STOD) converter are employed to construct the implemented AFE. The simulation results indicate that the AFE provides a dynamic range of 0 dB to 40 dB power gain with 2 dB resolution. Measurement results show the minimum detectable voltage at the input of AFE is obtained at 20 mV peak-to-peak. The AFE and the proposed DBSPK demodulator are analyzed and fabricated in a 130 nm Bipolar-CMOS-DMOS (BCD) technology to recover the maximum data rate of 32 kbps where the carrier frequency is 128 kHz. The implemented DCOC, cascaded VGA, STOD, and the demodulator occupy 0.15 mm2, 0.063 mm2, 0.045 mm2, and 0.03 mm2 of area, respectively. The AFE and the demodulator consume 2.9 mA and 0.15 mA of current from an external 5 V power supply, respectively